Xinhua News Agency, Tokyo, September 5 - Diamond, as a semiconductor material, has the best insulation and voltage resistance performance and the highest thermal conductivity, but diamond usually has very high resistance. Japanese researchers solved this problem by doping impurities into diamond and successfully manufactured the first bipolar transistor, opening a new path for developing energy-saving semiconductor components. The National Institute of Advanced Industrial Science and Technology (AIST) recently announced in a bulletin that the insulation of diamond semiconductor materials determines that it will not be damaged under high voltage, and its good thermal conductivity allows it to efficiently dissipate internal heat when strong current passes through. ME1000 Portable Melt-blown Fabric Filtration Efficiency Tester - Yang... However, the high resistance of diamond has become a major obstacle in its application. Researchers including Satoshi Yamasaki, a senior researcher at AIST, noticed that even when impurities are doped into diamond, it can maintain a good crystal structure. Product Center. On this basis, they developed a technology to mix high-concentration impurities into diamond and significantly reduced the resistance of diamond using the mechanism of hopping conduction. Using this low-resistance diamond, the researchers finally succeeded in manufacturing the bipolar transistor necessary for high-performance semiconductor components. As an efficient current control component, it has been widely used in industries such as broadcasting, telecommunications, computers, automatic control, and household appliances.